ION-IMPLANTATION INDUCED PHOTOSENSITIVITY IN GE-DOPED SILICA - EFFECTOF INDUCED DEFECTS ON REFRACTIVE-INDEX CHANGES

Authors
ESSID M BREBNER JL ALBERT J AWAZU K
Citation
M. Essid et al., ION-IMPLANTATION INDUCED PHOTOSENSITIVITY IN GE-DOPED SILICA - EFFECTOF INDUCED DEFECTS ON REFRACTIVE-INDEX CHANGES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 141(1-4), 1998, pp. 616-619
Citations number
5
Categorie Soggetti
Instument & Instrumentation","Nuclear Sciences & Tecnology","Physics, Atomic, Molecular & Chemical","Physics, Nuclear
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
141
Issue
1-4
Year of publication
1998
Pages
616 - 619
Database
ISI
SICI code
0168-583X(1998)141:1-4<616:IIPIGS>2.0.ZU;2-O
Abstract
Planar germanosilicate thin film glasses grown by flame hydrolysis tec hnique on silica substrate have been implanted at 5 MeV with silicon i ons to a dose of 10(14) ions/cm(2), Samples were subsequently exposed to a series of KrF (5 eV) and ArF (6.4 eV) excimer laser irradiation. Optical absorption and electron spin resonance were measured before an d after each series of irradiation. We report an important refractive index change that can be correlated with the photobleaching of the ion implantation induced absorption bands. (C) 1998 Elsevier Science B.V. All rights reserved.