STRUCTURAL RELAXATION OF MEV ION-IMPLANTED SILICA GLASSES BY THERMAL ANNEALING

Authors
FUKUMI K CHAYAHARA A KITAMURA N NISHII J HORINO Y MAKIHARA M FUJII K HAYAKAWA J
Citation
K. Fukumi et al., STRUCTURAL RELAXATION OF MEV ION-IMPLANTED SILICA GLASSES BY THERMAL ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 141(1-4), 1998, pp. 620-624
Citations number
18
Categorie Soggetti
Instument & Instrumentation","Nuclear Sciences & Tecnology","Physics, Atomic, Molecular & Chemical","Physics, Nuclear
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
141
Issue
1-4
Year of publication
1998
Pages
620 - 624
Database
ISI
SICI code
0168-583X(1998)141:1-4<620:SROMIS>2.0.ZU;2-E
Abstract
Thermal relaxation of Si-O-Si bond angle has been studied in 1 MeV B+- ion, 1 MeV O+-ion and 4 MeV Ni2+-ion implanted silica glasses by infra red reflection and visible and near-infrared reflection spectroscopy. It is found that the change in Si-O-Si bond angle is not proportional to the change in molar volume upon annealing. It is deduced that the r elaxation mechanism of Si-O-Si bond angle accompanied by little densit y change has an activation energy of about 100 kJ mol(-1). (C) 1998 El sevier Science B.V. All rights reserved.