ORIGIN OF ENORMOUS PHOTON-INDUCED VOLUME EXPANSION OF GEO2-SIO2 THIN GLASS-FILMS

Authors
NISHII J YAMANAKA H HOSONO H KAWAZOE H
Citation
J. Nishii et al., ORIGIN OF ENORMOUS PHOTON-INDUCED VOLUME EXPANSION OF GEO2-SIO2 THIN GLASS-FILMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 141(1-4), 1998, pp. 625-628
Citations number
10
Categorie Soggetti
Instument & Instrumentation","Nuclear Sciences & Tecnology","Physics, Atomic, Molecular & Chemical","Physics, Nuclear
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
141
Issue
1-4
Year of publication
1998
Pages
625 - 628
Database
ISI
SICI code
0168-583X(1998)141:1-4<625:OOEPVE>2.0.ZU;2-F
Abstract
Large positive volume change was induced in GeO2-SiO2 thin glass films by irradiation with ArF excimer laser pulses. The photo-sensitivity o f the thin film increased with the GeO2 content. The concentration of GeO2 in the irradiated portion decreased by irradiation. Enhanced etch ing rate of the irradiated area implies that the thin glass film is ch anged into a porous structure. Infrared absorption revealed that the b ond angle between Si-O-Si is increased by 1.1 degrees by irradiation. These results suggest that the selective vaporization of Ge components is one of the origins of the enormous photon-induced volume expansion . (C) 1998 Elsevier Science B.V. All rights reserved.