SELF-ALIGNED 10-NM BARRIER LAYER FORMATION TECHNOLOGY FOR FULLY SELF-ALIGNED METALLIZATION METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR

The technology for self-aligned 10-nm barrier layer formation on self- aliened silicidation (salicide) n(+)/p shallow junction has been devel oped for fully self-aligned metallization metal-oxide-semiconductor fi eld-effect-transistor (FSAM-MOSFET). The features of FSAM-MOSFET are ( 1) self-aliened silicidation (salicide) for low Si/TiSi2 contact resis tances in source/drain and gate (S/D&G) regions, (2) self-aligned barr ier layer on TiSi2 surface, and (3) selective aluminum chemical vapor deposition (Al CVD) on the barrier layer surface for low sheet resista nces. The FSAM structure can yield high performance with wide gate wid th and with localized contacts. For the self-aligned barrier layer on TiSi2 surface, a low-temperature N-2 plasma nitridation has been devel oped. It has been experimentally confirmed that (1) aluminum is select ively deposited on the nitrided layer of TiSi2, (2) the nitrided layer acts as a barrier layer for Al, and (3) this barrier layer is a 10-nm -thick Ti-Si-N ternary amorphous layer. The combination of salicidatio n, the self-aligned ultrathin barrier layer formation and selective Al CVD is promising for fabricating a deep-submicron FSAM-MOSFET.