ENHANCEMENT OF SILICON EPITAXY BY INCREASED PHOSPHORUS CONCENTRATION IN A LOW-ENERGY ION-BOMBARDMENT PROCESS

For a low-energy (<30 eV) ion bombardment process, the effect of phosp horus concentration on low-temperature (350-400 degrees C) silicon epi taxial growth is reported. The conditions of ion energy and ion nux re quired for realizing low-temperature epitaxial growth were precisely i nvestigated. We found that phosphorus hoping significantly enhanced si licon epitaxial growth. It is difficult to realize high-quality film g rowth with lightly phosphorus-doped silicon. However, large-mass, larg e-radius ion (xenon) bombardment is quite effective for improving the quality of silicon film with lightly phosphorus-doped silicon.