IN-SITU INFRARED-SPECTROSCOPY ON THE WET CHEMICAL OXIDATION OF HYDROGEN-TERMINATED SI SURFACES

In situ infrared spectroscopy was used to observe the early stage of o xidation on hydrogen-terminated Si(100) and (111) in solution. The obs ervation confirmed that the oxidation starts with the insertion reacti on of oxygen atoms to the back bonds of the topmost silicon atoms in H 2O2 solution. It was found both that the back bond and Si-H bond were oxidized in ozonized water. The dependence of the oxidation reaction o f the Si-H bond and its back bond on surface orientation was discussed and the evidence of island growth of the oxide film was shown.