IMPROVED BLOCKING VOLTAGE IN DIODE WITH NEUTRON-TRANSMUTATION-DOPED SILICON BY FIELD OXIDE ANNEALED IN N2O

The blocking voltage in diode (i.e., PN junction) using neutron-transm utation-doped Si can be improved by a field oxide annealed in N2O. It is experimentally determined that the reverse breakdown voltage is cle arly increased although the ideality factor and leakage current densit y increase slightly. The improvement of blocking voltage may be due to the replacement of strained Si-O bonds by Si-N bonds in the field oxi de and/or the relaxation of SiO2/Si interfacial strain. The increase o f the ideality factor and leakage current for N2O-annealed devices mig ht be attributed to the increase of SiO2/Si interface states.