EPITAXIAL-GROWTH OF TIN(100) ON SI(100) BY REACTIVE MAGNETRON SPUTTERING AT LOW-TEMPERATURE

Epitaxial growth of TiN (150 nm) on Si(100) has been thoroughly invest igated by X-ray pole figure analysis. During reactive magnetron sputte ring using metal targets, the epitaxial ordering of sputtered atoms st arts between 300 degrees C and 400 degrees C. Below this range, the fi lms have a fiber structure, with TiN(200) parallel to Si(100). Above t his range, further in-plane order is developed such that Si(001)[110]/ /TiN(002)[110], which is clearly established by both X-ray and electro n diffractions, This is the case despite the large lattice mismatch (D elta a/a=24.6%), suggesting that lattice matching is not always a prer equisite for epitaxial growth.