LITTLE INFLUENCE OF KINKS ON THE FORMATION OF C(4X2) DOMAINS IN A SI(001) SURFACE AT LOW-TEMPERATURE

Authors
TOCHIHARA H NAKAMURA Y KAWAI H NAKAYAMA M SATO T SUEYOSHI T AMAKUSA T IWATSUKI M
Citation
H. Tochihara et al., LITTLE INFLUENCE OF KINKS ON THE FORMATION OF C(4X2) DOMAINS IN A SI(001) SURFACE AT LOW-TEMPERATURE, Journal of the Physical Society of Japan, 67(7), 1998, pp. 2330-2334
Citations number
27
Categorie Soggetti
Physics
Journal title
Journal of the Physical Society of Japan → ACNP
ISSN journal
00319015
Volume
67
Issue
7
Year of publication
1998
Pages
2330 - 2334
Database
ISI
SICI code
0031-9015(1998)67:7<2330:LIOKOT>2.0.ZU;2-F
Abstract
The structure of a Si(001) surface with monatomic steps is investigate d by means of scanning tunneling microscopy at 95K and Monte Carlo sim ulations (MCS) at various temperatures. In particular, we pay attentio n to the effect of kinks at the step edge on the formation of c(4 x 3) domains, and both studies reveal that the kinks do not govern che gro wth of the domains. MCS demonstrates that the nucleation of c(4 x 2) d omains takes place at central regions of the terrace as a result of th ermal fluctuation, and that the domains propagate to the step edge wit h decreasing temperature.