ELECTRONIC-PROPERTIES OF THE GA VACANCY IN GAP(110) SURFACES DETERMINED BY SCANNING-TUNNELING-MICROSCOPY

Authors
EBERT P URBAN K
Citation
P. Ebert et K. Urban, ELECTRONIC-PROPERTIES OF THE GA VACANCY IN GAP(110) SURFACES DETERMINED BY SCANNING-TUNNELING-MICROSCOPY, Physical review. B, Condensed matter, 58(3), 1998, pp. 1401-1404
Citations number
28
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
58
Issue
3
Year of publication
1998
Pages
1401 - 1404
Database
ISI
SICI code
0163-1829(1998)58:3<1401:EOTGVI>2.0.ZU;2-G
Abstract
The electronic properties of uncharged Ga monovacancies in GaP(110) su rfaces are determined from voltage-dependent scanning tunneling micros copy images. The signatures of localized defect states in the band gap are analyzed and their spatial location is determined. Empty and occu pied defect states exist. Depressed dangling bonds in the occupied-sta te images indicate an inward relaxation of the neighboring P atoms. Th e results agree with recent theoretical work. [S0163-1829(98)02927-0].