HIGH-BRIGHTNESS SOURCE FOR ION AND ELECTRON-BEAMS (INVITED)

Citation
S. Kalbitzer et A. Knoblauch, HIGH-BRIGHTNESS SOURCE FOR ION AND ELECTRON-BEAMS (INVITED), Review of scientific instruments, 69(2), 1998, pp. 1026-1031
Citations number
17
Categorie Soggetti
Physics, Applied","Instument & Instrumentation
ISSN journal
00346748
Volume
69
Issue
2
Year of publication
1998
Part
2
Pages
1026 - 1031
Database
ISI
SICI code
0034-6748(1998)69:2<1026:HSFIAE>2.0.ZU;2-5
Abstract
By controlled formation of nanoprotrusions on single-crystal tips of t ungsten and iridium extremely bright beams of both ions and electrons were obtained. Specific brightness values range up to 1 TA/cm(2) srd e V which are considerably higher than those of previous source systems for charged particle emission. The physical mechanisms involved in the generation of these supertips will be outlined. The basic source prop erties were used to estimate the limiting image size and the obtainabl e target current-densities. Some of the most important applications of ion and electron beams are considered for materials modification and analysis. (C) 1998 American Institute of Physics.