RAMAN-STUDY OF INTERFACE MODES SUBJECTED TO STRAIN IN INAS GAAS SELF-ASSEMBLED QUANTUM DOTS/

Interface vibrational modes localized at the apexes of pyramidal InAs self-assembled quantum dots embedded in GaAs were observed by resonanc e Raman scattering. The comparison of the frequency positions of the i nterface modes with those obtained theoretically reveals a strong infl uence of the strain. The strain calculated for the InAs/GaAs dots sati sfactorily explains the strain-induced frequency shifts obtained for t he interface modes. It is important to notice that the interface modes observed in this study can be found in any corrugated interfaces cont aining tips and cusps where they can be localized.