Ht. Shi et D. Lederman, SURFACE SMOOTHING AND CRYSTALLINE REORIENTATION IN THIN COBALT FILMS, Physical review. B, Condensed matter, 58(4), 1998, pp. 1778-1781
Epitaxial cobalt films in the thickness range of 3.9 to 8.6 nm were de
posited on Al2O3[11 (2) over bar 0] substrates by de magnetron sputter
ing at a substrate temperature of 315 degrees C. In situ annealing was
performed in a vacuum after which the samples were rapidly quenched t
o room temperature in order to preserve the high temperature structure
. Ex situ atomic-force microscopy revealed that surface roughening tak
es place during annealing and reaches a maximum when the annealing tem
perature TA is equal to a critical temperature T(C)similar to 500 degr
ees C. We discovered that if T-A>T-C the surface becomes smooth again,
although large rectangular pits that go down to the substrate also ap
pear. X-ray-diffraction data show that unannealed samples are oriented
along the hcp[0001] direction. Upon annealing samples transform to a
preferentially fcc[111] orientation for T-A<T-C, and subsequently to a
fcc[001] orientation for T-A>T-C. We show that surface or interface o
xidation cannot be the sole cause of this effect. We speculate that an
increasing interface strain st higher temperatures or a surface recon
struction of the substrate are possible mechanisms.