BAND-TAIL PARAMETER MODELING IN SEMICONDUCTOR-MATERIALS

An analytical formulation and modeling for determining the band-tail p arameter E-0 taking into account the canrier-impurity and phonon-carri er interactions and the structural disorder is presented. An analysis of the different contributions to E-0 at low and room temperature in n - and p-type GaAs is also done. The theoretical results agree very wel l with experiment for noncompensated GaAs samples. The agreement was a chieved in a wide range of carrier concentrations at 5 K and room temp erature by adding a constant value to E-0, lower than 4.1 meV, related to the structural disorder.