We present photoluminescence measurements of self-assembled InP quantu
m dots on a GaAs surface (i.e., freestanding dots), under the influenc
e of a high magnetic field. Reasonably sharp luminescence features are
seen corresponding to the ground state, and several excited states. M
agnetic-field-dependent measurements an presented and compared with ca
lculations based on a finite-difference method using the envelope appr
oximation. The calculations include a realistic pyramidal shape for th
e dots, as well as strain. We find good agreement between theory and e
xperiments.