SPIN-GLASS PHASE IN THE ENSEMBLE OF AMPHOTERIC IMPURITIES IN A SEMICONDUCTOR

The transition to the spin-glass phase at T = 0 has been found for a t wo-dimensional ensemble of amphoteric impurities with charge transfer. The characteristics of the charge clustering found in specimens at lo w temperatures have been investigated. The finite size scaling with th e critical exponents nu = 0.95 +/- 0.05, eta = 0.75 +/- 0.05 has been found for the spin-glass susceptibility chi(SG)(L, T) and Binder param eter g(L, T). (C) 1998 Elsevier Science B.V.