A balanced resistive GaAs high electron mobility transistor mixer mono
lithic microwave integrated circuit has been designed and fabricated i
n a production oriented technology. The design is based on a specialis
ed large signal model for linear transistor operation. The conversion
loss was 8 - 10 dB for 70 - 90 GHz and the noise figure at 100 kHz was
31 dB, which is 11 dB lower than that obtained with diode mixers.