SHORT-WAVELENGTH BOTTOM-EMITTING VERTICAL-CAVITY LASERS FABRICATED USING WAFER BONDING

Authors
CHOQUETTE KD GEIB KM ROBERDS B HOU HQ TWESTEN RD HAMMONS BE
Citation
Kd. Choquette et al., SHORT-WAVELENGTH BOTTOM-EMITTING VERTICAL-CAVITY LASERS FABRICATED USING WAFER BONDING, Electronics Letters, 34(14), 1998, pp. 1404-1405
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
14
Year of publication
1998
Pages
1404 - 1405
Database
ISI
SICI code
0013-5194(1998)34:14<1404:SBVLFU>2.0.ZU;2-I
Abstract
Selectively oxidized 850nm vertical cavity surface emitting laser diod es which emit through transparent n-type GaP and AlGaAs substrates are reported. The short wavelength bottom-emitting lasers are fabricated using a low temperature inert gas wafer fusion process. Compared to to p-emitting lasers, the bottom-emitting lasers bonded to n-type AlGaAs substrates show comparable electrical characteristics, while lasers bo nded to n-type GaP substrates exhibit higher series resistance and vol tage.