OPTOELECTRONIC CHARACTERISTICS OF A-SIC-H-BASED PIN THIN-FILM LEDS HAVING A THIN MO BUFFER LAYER IN CONTACT WITH P-TYPE A-SI-H

Authors
CHEN YA WU YH TSAY WC LAIH LH HONG JW CHANG CY
Citation
Ya. Chen et al., OPTOELECTRONIC CHARACTERISTICS OF A-SIC-H-BASED PIN THIN-FILM LEDS HAVING A THIN MO BUFFER LAYER IN CONTACT WITH P-TYPE A-SI-H, Electronics Letters, 34(14), 1998, pp. 1433-1434
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
14
Year of publication
1998
Pages
1433 - 1434
Database
ISI
SICI code
0013-5194(1998)34:14<1433:OCOAPT>2.0.ZU;2-7
Abstract
To improve the electroluminescence (EL) properties of the nSiC:H-based pin thin film light-emitting diodes (TFLEDs) with the promotion of ho le injection efficiency, a thin Mo metal film was used as a buffer lay er to prevent reactions between the ITO (indium-tin-oxide) electrode a nd the p(+)-a-Si:H layer. With the formation of semi-transparent Mo si licide after annealing, a lower EL threshold voltage and a significant ly higher brightness for a finished TFLED were achieved. The brightnes s of the obtained device was 1300cd/m(2) at an injection current densi ty of 600mA/cm(2), and its EL threshold voltage was 14V.