PICOSECOND SWITCHING DUE TO ELECTRON-TUNNELING AND AVALANCHE IN GAAS ALXGA1-XAS DIODE/

Authors
GEIZUTIS A KROTKUS A REKLAITIS A ASCHE M
Citation
A. Geizutis et al., PICOSECOND SWITCHING DUE TO ELECTRON-TUNNELING AND AVALANCHE IN GAAS ALXGA1-XAS DIODE/, Electronics Letters, 34(14), 1998, pp. 1434-1436
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
14
Year of publication
1998
Pages
1434 - 1436
Database
ISI
SICI code
0013-5194(1998)34:14<1434:PSDTEA>2.0.ZU;2-G
Abstract
A new semiconductor heterostrostructure diode with an S-type current-v oltage characteristic that can be used for high-speed voltage switchin g is proposed and demonstrated. This behaviour is caused by the electr ons tunnelling through the potential barrier and initiating avalanche multiplication in a small energy gap base region.