APPLICATIONS OF BN-CONTAINING AND ZNF2-CONTAINING ZINC BORATE GLASSESTO LASER-ANNEALED POLYCRYSTALLINE SI FIELD-EFFECT TRANSISTORS

The characteristics of MOS (metal oxide semiconductor) capacitors pass ivated by ZnF2- and BN-containing ZnO-B2O3-SiO2-Al2O3-P2O5 glasses wit h various contents of water were investigated. When the OH absorption coefficients in the glasses increased, there was an adverse effect on the recovery of shifts of the hysteresis C-V (capacitance and voltage) curves of the capacitance as a function of voltage. ZnF2 has an affin ity for OH- ions, and the addition of BN progressively decreased OH- i ons in ZnO-B2O3-SiO2-Al2O3-P2O5 glasses. It was found that MOS capacit ors passivated with BN-containing glasses showed improvement in C-V cu rve shifts and hysteresis. The source-drain current and-voltage (I-V) characteristics of both the typical enhancement and depletion mode fie ld effect transistors passivated and rounded at 750 degrees C by these glass membranes were confirmed, (C) 1998 Elsevier Science Ltd.