ZnO buffer layers were grown by a chemical-bath deposition (CBD) in or
d.er to improve the interface quality in p-CuInS2 based solar cells, t
o improve the light transmission in the blue wavelength region, but al
so as an alternative to eliminate the toxic cadmium. The process consi
sts of immersion of different substrates (glass, CIS) in a dilute solu
tion of tetraamminezinc II, [Zn(NH2)(4)](2+), complex at 60-95 degrees
C. During the growth process, a homogeneous growth mechanism which pr
oceeds by the sedimentation of a mixture of ZnO and Zn(OH), clusters f
ormed in solution, competes with the heterogeneous growth mechanism. T
he mechanism consists of specific adsorption of a complex Zn(II) follo
wed by a chemical reaction. The last process of growth results in thin
, hard, adherent and specularly reflecting films. The characterization
of the deposited CBD-ZnO layers was performed by X-ray diffraction (X
RD), optical transmittance, scanning electron microscopy, transmission
electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS).
The as-deposited films on glass show hexagonal zincite structure with
two preferred orientations (1 0 0) and (1 0 1). High optical transmit
tance up to 80% in the near-infrared and part of the visible region wa
s observed. The low growth rate of the films on CIS suggests an atomic
layer-by-layer growth process.The device parameters and performance a
re compared to heterojunction with a standard CdS buffer layer. (C) 19
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