Comparative studies of tunnel luminescence, thermally stimulated lumin
escence (TSL), and trap energy spectra by the fractional glow techniqu
e (FGT) have been made both with sanidine and microcline feldspars. Af
ter X-irradiation at LNT these feldspars show intense tunnelling after
glow. As the temperature,is raised, several TSL glow peaks may be obse
rved, starting at 135 K. An intense peak at 250 K is common to all fou
r investigated microclines. In samples of sanidine, tunnelling aftergl
ow overcomes TSL up to 250-260 K. With sanidine and microcline samples
, the distributions of trap activation energies vs temperature obtaine
d by the FGT are continuous and quasi-linear. Maxima in the trap densi
ty are observed, indicating the presence of several kinds of stable de
fect structures. It may be concluded that below 100 K the thermally st
imulated processes in the samples are frozen. Tunnelling recombination
occurs between deeper localized states which are stable up to RT and
higher. These results are attributed to the known 'Al-Si order-disorde
r' effect in feldspar crystals. It leads-to the formation of wide cont
inuous energy distributions of localized states. Donor-acceptor defect
s are caused by the association of Al3+ substituted in the centers of
SiO4 tetrahedra and alkali ions in interstitial positions. (C) 1998 Pu
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