L. Shcherbak et al., GE DOPING INFLUENCE ON CDTE POSTMELTING EFFECT, Journal de chimie physique et de physico-chimie biologique, 95(7), 1998, pp. 1748-1756
DTA measurements of CdTe and CdTe +1(2;4;6) at% Ge specimens were perf
ormed in the 1140 K < melting point < 1440 K temperature range. The in
fluence of the heating rate and the free space above the melt values o
n the registered thermal effects was critically investigated. The CdTe
melting point as high as 1379+/-1 K was recorded in some experiments.
A series of additional effects has been observed while CdTe and CdTe-
Ge were heating, cooling or CdTe-Ge melts holding at 1428+/-1 K, 1 h.
They are interpreted either as due to non-equilibrium crystallization,
evaporation-condensation events, and dissociation-association process
es or caused by the occurrence of a high-temperature cadmium telluride
polymorphic modification.