GE DOPING INFLUENCE ON CDTE POSTMELTING EFFECT

Citation
L. Shcherbak et al., GE DOPING INFLUENCE ON CDTE POSTMELTING EFFECT, Journal de chimie physique et de physico-chimie biologique, 95(7), 1998, pp. 1748-1756
Citations number
11
Categorie Soggetti
Biology,"Chemistry Physical
Volume
95
Issue
7
Year of publication
1998
Pages
1748 - 1756
Database
ISI
SICI code
Abstract
DTA measurements of CdTe and CdTe +1(2;4;6) at% Ge specimens were perf ormed in the 1140 K < melting point < 1440 K temperature range. The in fluence of the heating rate and the free space above the melt values o n the registered thermal effects was critically investigated. The CdTe melting point as high as 1379+/-1 K was recorded in some experiments. A series of additional effects has been observed while CdTe and CdTe- Ge were heating, cooling or CdTe-Ge melts holding at 1428+/-1 K, 1 h. They are interpreted either as due to non-equilibrium crystallization, evaporation-condensation events, and dissociation-association process es or caused by the occurrence of a high-temperature cadmium telluride polymorphic modification.