SCATTERING RATES IN A SEMICONDUCTOR HETEROSTRUCTURE - THE ELECTRON-PHONON COUPLING

Citation
F. Comas et al., SCATTERING RATES IN A SEMICONDUCTOR HETEROSTRUCTURE - THE ELECTRON-PHONON COUPLING, International journal of modern physics b, 12(16-17), 1998, pp. 1719-1728
Citations number
17
Categorie Soggetti
Physics, Condensed Matter","Physycs, Mathematical","Physics, Applied
ISSN journal
02179792
Volume
12
Issue
16-17
Year of publication
1998
Pages
1719 - 1728
Database
ISI
SICI code
0217-9792(1998)12:16-17<1719:SRIASH>2.0.ZU;2-#
Abstract
We investigate Scattering-Rates due to the electron-phonon interaction in a Semiconductor Heterostructure (SH) on the basis of a phenomenolo gical theory for Polar Optical Phonons (POP) in semiconductor nanostru ctures which was proposed in the latter times. The applied theory has led to a plausible description of POP in Quantum-Wells, Quantum-Wires and Quantum-Dots. Using this theory we find an explicit expression for the electron-phonon Hamiltonian with direct application to a SH. Scat tering Rates are calculated by applying this Hamiltonian and also a re alistic wave-function for the electron states (using Airy functions) i s considered. The obtained results are discussed in detail and compare d with previous works on the subject.