PHOTOLUMINESCENCE STUDY OF ION-IMPLANTED SILICON

Defects in silicon induced by ion implantation and thermal annealing h ave been investigated by Photoluminescence (PL) measurement. B or P wa s implanted at 300 keV or 700 keV, respectively, and the fluence was 2 .0 x 10(13) cm(-2). Sharp I-lines and broad emission bands were observ ed in the PL spectra. The annealing behavior of the PL spectra was dif ferent between Furnace Annealing (FA) and Rapid Thermal Annealing (RTA ). In the case of FA below 600 degrees C, we have observed luminescenc e lines at 0.992 eV and at 1.097 eV. The 1.097 eV line did not depend on the annealing atmosphere or the transition-metal contamination. The 0.992 eV line appeared only after annealing in vacuum and was strongl y affected by the Cu contamination. The Fe contamination also affected the appearance of the 0.992 eV line while the Ni contamination did no t. We believe that these lines are due to the different types of point defect clusters and that the transition-metal, especially Cu, enhance s the formation of the 0.992 eV center. The annealing behavior of the PL spectra suggests a strong correlation between the 0.992 eV center a nd the I1 center.