A 3V OPERATION POWER MOSFETS FOR DCS1800 AND GSM RF AMPLIFIER

A 3 V operation n-channel silicon RF power MOSFETs have been developed for lithium-ion battery operated 900 MHz and 1.8 GHz cellular handset s. The ''NEWMOS'' is the newly developed NEC's 0.6 mu m WSi gate later al MOSFET technology, and the newly developed chips are housed in a th in and small outline surface mount package. The MOSFET for DCS1800 (Di gital Communication System 1800) final output stage amplifier achieved 32.0 dBm output power with 45% PAE (Power Added Efficiency) at 1.8 GH z under the 3.6 V supply voltage, and 31.5 dBm output power at reduced supply voltage of V-ds = 3.0 V, respectively. The MOSFET for GSM (Glo bal System for Mobile Communications) final output stage amplifier ach ieved 34.5 dBm output power with 58% PAE at 900 MHz under the 3.6 V su pply voltage, and 34.0 dBm output power at V-ds = 3.0 V, respectively.