GIXRD AND XPS INVESTIGATION OF SILICIDATION IN ION-BEAM MIXED CU SI(111) SYSTEM/

Authors
SARKAR DK BERA S NARASIMHAN SV CHOWDHURY S GUPTA A NAIR KGM
Citation
Dk. Sarkar et al., GIXRD AND XPS INVESTIGATION OF SILICIDATION IN ION-BEAM MIXED CU SI(111) SYSTEM/, Solid state communications, 107(8), 1998, pp. 413-416
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
107
Issue
8
Year of publication
1998
Pages
413 - 416
Database
ISI
SICI code
0038-1098(1998)107:8<413:GAXIOS>2.0.ZU;2-Z
Abstract
Grazing incidence X-ray diffraction (GIXRD) and X-ray photoelectron sp ectroscopy (XPS) are used for phase identification and the determinati on of chemical states of the Cu/Si(l 1 1) system ion beam mixed at roo m temperature (RT) and 100 degrees C. Cu 2p and Si 2p photoelectron pe aks are analyzed to study the silicide formation. GIXRD study shows th e formation of silicide phases in samples irradiated both at RT and 10 0 degrees C. (C) 1998 Elsevier Science Ltd. All rights reserved.