Two integrated circuits, a modulator driver and a photoreceiver integr
ating a metal-semiconductor-metal (MSM) photodetector, a differential
transimpedance amplifier and two limiting amplifier stages for high-sp
eed optical-fiber links are presented. The IC's were manufactured in a
0.2 mu m gate-length AlG aAs/GaAs-high-electron mobility transistor (
HEMT) technology with a f(T) of 60 GHz. The modulator driver IC operat
es up to 25 Gb/s with an output voltage swing of 3.3 Vp-p at each outp
ut, The 1.3-1.55 mu m wavelength monolithically integrated photoreceiv
er optoelectronic integrated circuit (OEIC) has a bandwidth of 17 GHz
with a high transimpedance gain of 12 k Omega. Eye diagrams are demons
trated at 20 Gb/s with an output voltage of 1 Vp-p.