EFFECTS OF SI-DOPING IN THE BARRIERS OF INGAN MULTIQUANTUM-WELL PURPLISH-BLUE LASER-DIODES

Optical gain spectra of InGaN multiquantum well laser diode wafers hav ing Si-do-Feci or undoped InGaN barriers were compared. Although evide nce for effective band-gap inhomogeneity was found in both structures, the wells with the Si-doped barriers exhibited a smaller Stokes-like shift. Si doping suppressed emergence of a secondary amplified spontan eous emission peak at 3.05 eV, which was uncoupled with the primary on e at 2.93 eV. Furthermore Si doping reduced the threshold power densit y required to obtain the stimulated emission. (C) 1998 American Instit ute of Physics.