ELECTROLUMINESCENCE EFFICIENCY OF 1.3 MU-M WAVELENGTH INGAAS GAAS QUANTUM DOTS/

Data are presented characterizing the spectral emission and the electr oluminescence efficiency dependence on growth conditions of 1.3 mu m w avelength InGaAs/GaAs quantum dots. We show that highly efficient 1.3 mu m room temperature electroluminescence can be achieved with only te n total deposited monolayers with an averaged In content of 50%. Atomi c force microscopy shows that the 1.3 mu m wavelength quantum dots for m with a density of similar to 1.3x10(10) cm(-2). (C) 1998 American In stitute of Physics.