VISIBLE PHOTOLUMINESCENCE FROM GE-IMPLANTED SIO2-FILMS THERMALLY GROWN ON CRYSTALLINE SI()

Citation
Yh. Ye et al., VISIBLE PHOTOLUMINESCENCE FROM GE-IMPLANTED SIO2-FILMS THERMALLY GROWN ON CRYSTALLINE SI(), Applied physics A: Materials science & processing, 67(2), 1998, pp. 213-217
Citations number
19
Categorie Soggetti
Physics, Applied
ISSN journal
09478396
Volume
67
Issue
2
Year of publication
1998
Pages
213 - 217
Database
ISI
SICI code
0947-8396(1998)67:2<213:VPFGST>2.0.ZU;2-H
Abstract
Visible light emission from Ge+-implanted SiO2 films is studied as a f unction of different fabricating conditions (implantation dose, anneal ing temperature and time). The SiO2 films containing Ge nanocrystals e xhibit two photoluminescence (PL) bands peaked at 600 nm and 780 nm. T here are two excitation bands in the PL excitation (PLE) spectra. With variation in Ge nanocrystal size, the PL and PLE peak energies show n o appreciable shift. The PL and PLE spectral analyses suggest that dur ing the PL process, electron-hole pairs are generated by the E(1) and E(2) direct transitions inside Ge nanocrystals, which then radiatively recombine via luminescent centers in the matrix or at the interface b etween the nanocrystal/matrix.