EFFECTS OF TEMPERATURE AND PRESSURE ON CVD DIAMOND GROWTH FROM THE C-H-O SYSTEM

Authors
WAN YZ ZHANG DW LIU ZJ WANG JT
Citation
Yz. Wan et al., EFFECTS OF TEMPERATURE AND PRESSURE ON CVD DIAMOND GROWTH FROM THE C-H-O SYSTEM, Applied physics A: Materials science & processing, 67(2), 1998, pp. 225-231
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics A: Materials science & processing → ACNP
ISSN journal
09478396
Volume
67
Issue
2
Year of publication
1998
Pages
225 - 231
Database
ISI
SICI code
0947-8396(1998)67:2<225:EOTAPO>2.0.ZU;2-H
Abstract
Isotherm, isopiestic, and vertical sections of the theoretical phase d iagram for CVD (chemical vapor deposition) diamond growth are calculat ed. It is found that CVD diamond synthesis is restricted not only by t he gas phase composition, but also by the temperature and pressure. Th e effects of temperature, pressure, and oxygen addition on the diamond growth region can be explained quantitatively. The calculation of the phase diagram provides a general prediction about suitable conditions for CVD diamond growth.