EFFECT OF OXYGEN ADDITION ON BORON INCORPORATION ON SEMICONDUCTIVE DIAMOND CVD

The suppression effect of oxygen on elemental incorporation in homoepi taxial diamond films grown by microwave assisted CVD is investigated b y secondary ion mass spectrometry. In the H-2-CH4-B2H6-O-2 gas system, boron incorporation into CVD diamond decreases with increasing oxygen addition, and boron concentration can be controlled by oxygen additio n. In the H-2-CH4-B2H6 gas system, a linear relationship between dibor ane in the gas and boron incorporation is observed. The growth rate of diamond is reduced by small amount of diborane. (C) 1998 Elsevier Sci ence S.A.