ION-IMPLANTATION DOPING OF CRYSTALLINE 6H-SIC

The feasibility of ion implantation for p- and n-type doping of 6H-SiC has been studied. Single crystals were implanted at room temperature with 10(17) ions/cm(3) of B and Al, and of N and P, respectively, and step-annealed at temperatures up to 1900 K. The state of the crystal o rder was monitored by ion-beam-scattering techniques. After annealing at 1800 K, at a backscattering yield of about 1% in [0001]-direction, maximum electrical activity of all dopants was observed within the ran ge of 3-80% at room temperature. Impurity ionization levels were deriv ed from conductivity measurements in the temperature range between 300 -80 K, which also indicate the presence of compensating defects.