GAMMA-RAY IMAGING AND SPECTROSCOPY SYSTEM USING ROOM-TEMPERATURE SEMICONDUCTOR DETECTOR ELEMENTS

Citation
Jc. Lund et al., GAMMA-RAY IMAGING AND SPECTROSCOPY SYSTEM USING ROOM-TEMPERATURE SEMICONDUCTOR DETECTOR ELEMENTS, Journal of radioanalytical and nuclear chemistry, 233(1-2), 1998, pp. 177-183
Citations number
9
Categorie Soggetti
Chemistry Inorganic & Nuclear","Chemistry Analytical","Nuclear Sciences & Tecnology
ISSN journal
02365731
Volume
233
Issue
1-2
Year of publication
1998
Pages
177 - 183
Database
ISI
SICI code
0236-5731(1998)233:1-2<177:GIASSU>2.0.ZU;2-G
Abstract
We report on the design, construction, and testing of a gamma-ray imag ing system with spectroscopic capabilities. The imaging system consist s of an orthogonal strip detector made from either HgI2 or CdZnTe crys tals. The detectors utilize an 8x8 orthogonal strip configuration with 64 effective pixels. Both HgI2 or CdZnTe detectors are 1 cm(2) device s with a strip pitch of approximately 1.2 mm (producing pixels of 1.2 mm x x 1.2 mm). The readout electronics consist of parallel channels o f preamplifier, shaping amplifier, discriminators, and peak sensing AD C. The preamplifiers are configured in hybrid technology, and the rest of the electronics are implemented in NIM and CAMAC with control via a Power Macintosh computer. The software used to readout the instrumen t is capable of performing intensity measurements as well as spectrosc opy on all 64 pixels of the device. We report on the performance of th e system imaging gamma-rays in the 20-500 keV energy range and using a pin-hole collimator to form the image.