W. Vogel et al., SHELL-WISE OXIDATION OF NANOCRYSTALLINE SILICON OBSERVED BY X-RAY-DIFFRACTION AND TEM, New journal of chemistry, 22(7), 1998, pp. 749-752
The oxidation of nanocrystalline silicon powder (average crystallite s
ize of 87 Angstrom), prepared by laser-driven pyrolysis of SiH4, has b
een studied by X-ray diffraction and transmission electron microscopy.
In a previous study the Si particles were shown to form perfect isola
ted near-spherical 'single crystals' that are stable up to 1073 K unde
r high vacuum conditions. We have measured the size reduction of the S
i nanoparticles in a flow of oxygen as a function of the degree of oxi
dation. The results are in agreement with model calculations for a she
ll-wise oxidation of silicon surface layers to amorphous silicon oxide
. An oxidation to 50 vol.% implies a size reduction of 20% and tenfold
improved visible photoluminescence intensity. Preliminary kinetic stu
dies at 656 K in oxygen indicate a self-limiting type of oxidation, wh
ich is reached for an oxide layer thickness of approximate to 6.8 Angs
trom.