RAMAN-SCATTERING IN TERNARY ALASXSB1-X FILMS

Citation
Hc. Lin et al., RAMAN-SCATTERING IN TERNARY ALASXSB1-X FILMS, Solid state communications, 107(10), 1998, pp. 547-551
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
107
Issue
10
Year of publication
1998
Pages
547 - 551
Database
ISI
SICI code
0038-1098(1998)107:10<547:RITAF>2.0.ZU;2-8
Abstract
Thin films of the ternary AlAsxSb1-x alloys, prepared by metalorganic chemical vapor deposition, were studied by Raman scattering. The Raman shifts show one-mode behavior and the forbidden TO phonon scattering is observable due to the relaxed selection rule. Our results of the mi xed compounds can be interpreted using the spatial correlation model. Moreover, the enhanced scattering was observed at 2.15 and 2.8 eV whic h are attributable to the E-0 and E-1 transitions of AlAs and AlSb. (C ) 1998 Elsevier Science Ltd. All rights reserved.