Ap. Li et al., ELECTROLUMINESCENCE FROM AU EXTRA-THIN SI-RICH SIO2 FILM/N(+)-SI UNDER REVERSE BIASES AND ITS MECHANISM/, Thin solid films, 325(1-2), 1998, pp. 137-139
We have fabricated Au/extra-thin Si-rich SiO2 (ETSSO) film/p-Si and Au
/ETSSO/n(+)-Si structures and compared their electroluminescence (EL)
characteristics. It is found that for the Au/ETSSO/p-Si structure, whe
n the forward bias (a positive voltage is applied to the p-Si substrat
e with respect to the Au electrode) is larger than 4 V, red light emis
sion is observed, while under bias reverses, no light is emitted. The
Au/ETSSO/n(+)-Si structure does not emit light under the forward bias
(a positive voltage is applied to the Au electrode with respect to the
n(+)-Si substrate), but it emits red light when the reverse bias is g
reater than a critical value, which correlates with the thickness of t
he ETSSO film. We have suggested a model for the electroluminescence m
echanism of Au/ETSSO/n+-Si structures. (C) 1998 Elsevier Science S.A.
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