Electroluminescent devices with PVK film doped with monohexadecyl phth
alate terbium and PBD were fabricated. The device structure of glass s
ubstrate/ITO/PPV/PVK:Tb(MHP)(3):PBD/Alq(3)/Al was employed. The emissi
ve layer was formed by a spin-casting technique. The EL cells exhibite
d characteristic emission of terbium ions with a maximum luminance of
74 cd/m(2) at 18 V. (C) 1998 Elsevier Science S.A. All rights reserved
.