PROGRESS WITH GAN-BASED BLUE GREEN LEDS AND BLUISH-PURPLE SEMICONDUCTOR LDS/

High output InGaN single quantum well type blue and green light emitti ng diodes (LEDs) with an optical output of between 3 and 5 mW have bee n developed and commercialized. The differences in peak absorption ene rgy and light emitting energy for the blue and green LEDs were 290 and 570 meV. These values indicate that the LED or laser emission is gene rated from a deep localized level in an InGaN well layer. An InGaN mul tiple quantum well laser diode was developed that oscillated continuou sly at room temperature for more than 300 hours. The preliminary chara cteristics are an output of 50 mW, an operating temperature of 100 deg rees C, a characteristic temperature of 170 K, and an oscillation wave length of 416 nm. (C) 1998 Scripts Technica.