H. Requardt et al., STRUCTURAL STUDY OF THE CHARGE-DENSITY-WAVE MODULATION OF ISOELECTRONICALLY DOPED (TA1-XNBXSE4)(2)I (0.1-PERCENT-LESS-THAN-X-LESS-THAN-1.2-PERCENT), Journal of physics. Condensed matter, 10(29), 1998, pp. 6505-6514
We present a neutron and x-ray diffraction study of the charge-density
-wave modulation wave vector of (TaSe4)(2)I with isoelectronic Nb dopi
ng. In contrast to other charge-density-wave materials, like NbSe3 and
K0.3MoO3, Nb-doped (TaSe4)(2)I reveals a change of the modulation wav
e vector with doping. This change corresponds to a shift of the satell
ite position towards the Brillouin-zone centre on a nominal doping lev
el of 0.8% Nb being exceeded. On a 1.2% level of Nb doping being reach
ed, strong satellite broadening is observed, indicating the onset of s
hort-range charge-density-wave correlation. A recently derived phenome
nological model of the phase transition in (TaSe4)(2)I, which accounts
for changes in the modulation wave vector upon doping, is briefly dis
cussed.