GROWTH AND DISLOCATION ETCHING OF INBI0.8SB0.2 SINGLE-CRYSTAL

Authors
PANDYA GR DESAI CF SHAH RC SHAH KR
Citation
Gr. Pandya et al., GROWTH AND DISLOCATION ETCHING OF INBI0.8SB0.2 SINGLE-CRYSTAL, Crystal research and technology, 33(5), 1998, pp. 733-736
Citations number
9
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
33
Issue
5
Year of publication
1998
Pages
733 - 736
Database
ISI
SICI code
0232-1300(1998)33:5<733:GADEOI>2.0.ZU;2-R
Abstract
InBi0.8Sb0.2 single crystals have been grown by zone melting method. T he freezing interface temperature gradient of 30 degrees C/cm has been found to yield the best quality crystals obtainable at growth velocit y 1.0 cm/hr. Traingular features have been obtained on the free surfac e of the as grown crystal. A new dislocation etchant based on nitric a cid has been found to give reproducible etch-pitting on the cleavage s urface. Standard tests for a dislocation etchant have been carried out and results are reported.