InBi0.8Sb0.2 single crystals have been grown by zone melting method. T
he freezing interface temperature gradient of 30 degrees C/cm has been
found to yield the best quality crystals obtainable at growth velocit
y 1.0 cm/hr. Traingular features have been obtained on the free surfac
e of the as grown crystal. A new dislocation etchant based on nitric a
cid has been found to give reproducible etch-pitting on the cleavage s
urface. Standard tests for a dislocation etchant have been carried out
and results are reported.