ANALYSIS OF CHANGES IN THE INTENSITY OF THE INTRINSIC LUMINESCENCE AFTER THE COPPER DIFFUSION INTO SEMIINSULATING UNDOPED GAAS CRYSTALS

Authors
GLINCHUK KD PROKHOROVICH AV VOROBKALO FM
Citation
Kd. Glinchuk et al., ANALYSIS OF CHANGES IN THE INTENSITY OF THE INTRINSIC LUMINESCENCE AFTER THE COPPER DIFFUSION INTO SEMIINSULATING UNDOPED GAAS CRYSTALS, Crystal research and technology, 33(5), 1998, pp. 833-839
Citations number
8
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
33
Issue
5
Year of publication
1998
Pages
833 - 839
Database
ISI
SICI code
0232-1300(1998)33:5<833:AOCITI>2.0.ZU;2-B
Abstract
An analysis is made of the effect of the copper diffusion into semi-in sulating undoped GaAs crystals on the intensity of the intrinsic lumin escence. It is shown that the copper diffusion into semi-insulating un doped GaAs crystals could lead both to an increase and to a decrease i n the intrinsic luminescence intensity. Analytical expressions connect ing the value and the sign of the effect observed with the recombinati on parameters of crystals pointed and also with the intensity of lumin escence excitation are obtained.