NUMERICAL-ANALYSIS OF ABRUPT HETEROJUNCTION BIPOLAR-TRANSISTORS

This paper presents a physical-mathematical model for abrupt heterojun ction transistors and its solution using numerical methods with applic ation to InP/lnGaAs HBTs. The physical model is based on the combinati on of the drift-diffusion transport model in the bulk with thermionic emission and tunnelling transmission through the emitter-base interfac e. Fermi-Dirac statistics and bandgap narrowing distribution between t he valence and conduction bands are considered in the model. A compact formulation is used that makes it easy to take into account other eff ects such as the non-parabolic nature of the bands or the presence of various subbands in the conduction process. The simulator has been imp lemented for distributed memory multicomputers, making use of the MPI message-passing standard library. In order to accelerate the solution process of the linear system, iterative methods with parallel incomple te factorization-based preconditioners have been used. (C) 1998 John W iley & Sons, Ltd.