A combined investigation using thermal desorption spectroscopy (TDS) a
nd low-energy electron diffraction (LEED) shows that the area of the L
i-induced 3 x 1 reconstruction on Si(111) depends linearly on the amou
nt of adsorbed Li. This is in contrast to the concept of an impurity-s
tabilized 3 x 1 reconstruction by a small amount of Li through a long-
ranged mechanism. The desorption energy of the Li atoms involved in th
e reconstruction is 3.2 eV. This is substantially higher than that of
Li desorbing from the Si(111)7 x 7 surface (2.5 eV). The high desorpti
on energy points to saturation of dangling bonds by Li chemisorption,
which also explains the passivation of the Si(111)3 x 1-Li surface aga
inst oxidation. (C) 1998 Elsevier Science B.V. All rights reserved.