METALLIC POLYTHIOPHENE INORGANIC SEMICONDUCTOR SCHOTTKY DIODES

An examination of the rectification properties of organic conductor/in organic semiconductor/metal Schottky diodes has been made, in which fr eshly prepared polythiophene has been used as metal, and n-Si and n-Ga As as semiconductors. Polythiophene films were electrochemically obtai ned on glass substrates covered with Au in acetonitrile/0.25 M LiClO4 solution. The metallic polythiophene polymer has provided a good recti fying contact to the n-Si and n-GaAs semiconductors. The processing an d I-V and C-V measurements of the devices were done at room temperatur e in laboratory atmosphere. The forward I-V characteristics of the met allic polythiophene/n-Si and the metallic polythiophene/n-GaAs Schottk y diodes have exhibited ideality factors of 2.40 and 2.69, respectivel y. However, values obtained for the barrier height of these Schottky d iodes could be sufficient for many device applications. In addition, t he work function of the polythiophene was determined as 4.81 eV.