NEW PECULIARITIES OF NEAR-BAND-EDGE PHOTOLUMINESCENCE SPECTRA IN FAST-ELECTRON IRRADIATED INP EPILAYERS

The influence of fast-electron (E = 3.5 to 4 MeV) irradiation upon pho toluminescence (PL) spectra of nominally undoped n-InP epilayers is in vestigated. The broad PL band with complex structure in the range 1.39 to 1.40 eV is shown to consist of three individual bands with maxima at 1.390, almost-equal-to 1.395, and 1.397 eV (T = 10 K), the first on e appearing to be connected with the InP antisite defect. The almost-e qual-to 1.395 eV band shifts to high energies with increasing excitati on power which is indicative of carrier recombination via donor-accept or pairs. The band at 1.397 eV as well as the narrow one observed at 1 .408 eV are attributed to excitons bound with host defects which annea l at the temperature T.n. almost-equal-to 400-degrees-C.