THERMAL REACTIVATION OF NONRADIATIVE RECOMBINATION CENTERS IN HYDROGENATED ALXGA1-XASSI

Citation
Vs. Lysenko et al., THERMAL REACTIVATION OF NONRADIATIVE RECOMBINATION CENTERS IN HYDROGENATED ALXGA1-XASSI, Physica status solidi. a, Applied research, 139(2), 1993, pp. 541-547
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
00318965
Volume
139
Issue
2
Year of publication
1993
Pages
541 - 547
Database
ISI
SICI code
0031-8965(1993)139:2<541:TRONRC>2.0.ZU;2-O
Abstract
The effect of hydrogenation and annealing upon photoluminescence of MB E-grown AlGaAs: Si epitaxial layers is examined in detail. Nonradiativ e recombination centers passivated by hydrogen are found to be reactiv ated in a wider temperature range in comparison with Si donors or DX c enters. This process cannot be described by first-order kinetics.