Vs. Lysenko et al., THERMAL REACTIVATION OF NONRADIATIVE RECOMBINATION CENTERS IN HYDROGENATED ALXGA1-XASSI, Physica status solidi. a, Applied research, 139(2), 1993, pp. 541-547
The effect of hydrogenation and annealing upon photoluminescence of MB
E-grown AlGaAs: Si epitaxial layers is examined in detail. Nonradiativ
e recombination centers passivated by hydrogen are found to be reactiv
ated in a wider temperature range in comparison with Si donors or DX c
enters. This process cannot be described by first-order kinetics.