FERROELECTRIC THIN-FILMS FOR INTEGRATED PASSIVE COMPONENTS

Citation
M. Klee et al., FERROELECTRIC THIN-FILMS FOR INTEGRATED PASSIVE COMPONENTS, Philips journal of research, 51(3), 1998, pp. 363-387
Citations number
21
Categorie Soggetti
Engineering
Journal title
ISSN journal
01655817
Volume
51
Issue
3
Year of publication
1998
Pages
363 - 387
Database
ISI
SICI code
0165-5817(1998)51:3<363:FTFIPC>2.0.ZU;2-5
Abstract
Miniaturisation and integration of passive components play an importan t role in today's components market. It can be achieved by applying th in-film technologies for capacitors, resistors and inductors; high com ponent densities have been realised with 'Passive Only Networks'. The dielectric materials used for integrated thin-film capacitors ranging from Si3N4, Ta2O5, TiO2 to earth alkaline as well as lead perovskite l ayers are reviewed. The capacitor performances including temperature s tability, insulation resistance, breakdown fields and endurance are di scussed as a function of material composition.